Invention Grant
US09229328B2 Methods of forming semiconductor device structures, and related semiconductor device structures
有权
形成半导体器件结构的方法以及相关的半导体器件结构
- Patent Title: Methods of forming semiconductor device structures, and related semiconductor device structures
- Patent Title (中): 形成半导体器件结构的方法以及相关的半导体器件结构
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Application No.: US13875918Application Date: 2013-05-02
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Publication No.: US09229328B2Publication Date: 2016-01-05
- Inventor: Ranjan Khurana , Gurpreet S. Lugani , Dan B. Millward
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: G03F7/40
- IPC: G03F7/40
Abstract:
A method of forming a semiconductor device structure comprises forming a template material over a substrate, the template material exhibiting preferential wetting to a polymer block of a block copolymer. A positive tone photoresist material is formed over the template material. The positive tone photoresist material is exposed to radiation to form photoexposed regions and non-photoexposed regions of the positive tone photoresist material. The non-photoexposed regions of the positive tone photoresist material are removed with a negative tone developer to form a pattern of photoresist features. The pattern of photoresist features and unprotected portions of the template material are exposed to an oxidizing plasma to form trimmed photoresist features and a pattern of template features. The trimmed photoresist features are removed with a positive tone developer. Other methods of forming a semiconductor device structure, and a semiconductor device structure are also described.
Public/Granted literature
- US20140329179A1 METHODS OF FORMING SEMICONDUCTOR DEVICE STRUCTURES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES Public/Granted day:2014-11-06
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