Invention Grant
US09230614B2 Separate microchannel voltage domains in stacked memory architecture
有权
分层的微通道电压域在堆叠式存储架构中
- Patent Title: Separate microchannel voltage domains in stacked memory architecture
- Patent Title (中): 分层的微通道电压域在堆叠式存储架构中
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Application No.: US13977404Application Date: 2011-12-23
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Publication No.: US09230614B2Publication Date: 2016-01-05
- Inventor: Andre Schaefer , Ruchir Saraswat
- Applicant: Andre Schaefer , Ruchir Saraswat
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/067286 WO 20111223
- International Announcement: WO2013/095676 WO 20130627
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/00 ; G11C11/4074 ; G11C5/02 ; H01L25/065 ; H01L25/18

Abstract:
Separate microchannel voltage domains in a stacked memory architecture An embodiment of a memory device includes a memory stack including one or more coupled memory dies, wherein a first memory die of the memory stack includes multiple microchannels, and a logic chip coupled with the memory stack, the logic chip including a memory controller. Each of the microchannels includes a separate voltage domain, and a voltage level is controlled for each of the plurality of microchannels.
Public/Granted literature
- US20130279276A1 SEPARATE MICROCHANNEL VOLTAGE DOMAINS IN STACKED MEMORY ARCHITECTURE Public/Granted day:2013-10-24
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