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US09230614B2 Separate microchannel voltage domains in stacked memory architecture 有权
分层的微通道电压域在堆叠式存储架构中

Separate microchannel voltage domains in stacked memory architecture
Abstract:
Separate microchannel voltage domains in a stacked memory architecture An embodiment of a memory device includes a memory stack including one or more coupled memory dies, wherein a first memory die of the memory stack includes multiple microchannels, and a logic chip coupled with the memory stack, the logic chip including a memory controller. Each of the microchannels includes a separate voltage domain, and a voltage level is controlled for each of the plurality of microchannels.
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