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US09230621B2 Semiconductor memory device with signal reshaping and method of operating the same 有权
具有信号整形的半导体存储器件及其操作方法

Semiconductor memory device with signal reshaping and method of operating the same
Abstract:
A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes a buffer that inputs a first signal and outputs a first delay signal, a command decoder that outputs a second signal, a mask pulse signal generator that inputs the first delay signal and the second signal and generates a mask pulse signal, and a signal reshaper that inputs the first delay signal, the second signal and the mask pulse signal and reshapes the first delay signal or the second signal.
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