Invention Grant
US09230621B2 Semiconductor memory device with signal reshaping and method of operating the same
有权
具有信号整形的半导体存储器件及其操作方法
- Patent Title: Semiconductor memory device with signal reshaping and method of operating the same
- Patent Title (中): 具有信号整形的半导体存储器件及其操作方法
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Application No.: US14197883Application Date: 2014-03-05
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Publication No.: US09230621B2Publication Date: 2016-01-05
- Inventor: Yong Shim , In-Dal Song
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2013-0061057 20130529
- Main IPC: G06F13/12
- IPC: G06F13/12 ; G06F12/00 ; G11C7/10 ; G11C7/22 ; G11C11/4076

Abstract:
A semiconductor memory device and a method of operating the same are provided. The semiconductor memory device includes a buffer that inputs a first signal and outputs a first delay signal, a command decoder that outputs a second signal, a mask pulse signal generator that inputs the first delay signal and the second signal and generates a mask pulse signal, and a signal reshaper that inputs the first delay signal, the second signal and the mask pulse signal and reshapes the first delay signal or the second signal.
Public/Granted literature
- US20140258607A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME Public/Granted day:2014-09-11
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