Invention Grant
US09230630B2 Physically unclonable function based on the initial logical state of magnetoresistive random-access memory
有权
基于磁阻随机存取存储器的初始逻辑状态的物理不可克隆功能
- Patent Title: Physically unclonable function based on the initial logical state of magnetoresistive random-access memory
- Patent Title (中): 基于磁阻随机存取存储器的初始逻辑状态的物理不可克隆功能
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Application No.: US14072599Application Date: 2013-11-05
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Publication No.: US09230630B2Publication Date: 2016-01-05
- Inventor: Xiaochun Zhu , Steven M. Millendorf , Xu Guo , David M. Jacobson , Kangho Lee , Seung H. Kang , Matthew Michael Nowak
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H04L9/30 ; H04L9/08 ; H04L9/32

Abstract:
One feature pertains to a method for implementing a physically unclonable function (PUF). The method includes providing an array of magnetoresistive random access memory (MRAM) cells, where the MRAM cells are each configured to represent one of a first logical state and a second logical state. The array of MRAM cells are un-annealed and free from exposure to an external magnetic field oriented in a direction configured to initialize the MRAM cells to a single logical state of the first and second logical states. Consequently, each MRAM cell has a random initial logical state of the first and second logical states. The method further includes sending a challenge to the MRAM cell array that reads logical states of select MRAM cells of the array, and obtaining a response to the challenge from the MRAM cell array that includes the logical states of the selected MRAM cells of the array.
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