Invention Grant
US09230770B2 Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same
有权
导电性纳米结构体，其成型方法以及使用其的场致发射体的制造方法
- Patent Title: Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same
- Patent Title (中): 导电性纳米结构体，其成型方法以及使用其的场致发射体的制造方法
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Application No.: US13704902Application Date: 2011-02-23
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Publication No.: US09230770B2Publication Date: 2016-01-05
- Inventor: Yong Hyup Kim , Wal Jun Kim
- Applicant: Yong Hyup Kim , Wal Jun Kim
- Applicant Address: KR Seoul
- Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee Address: KR Seoul
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2010-0057576 20100617
- International Application: PCT/KR2011/001250 WO 20110223
- International Announcement: WO2011/159012 WO 20111222
- Main IPC: H01J19/06
- IPC: H01J19/06 ; H01K1/04 ; H01J9/02 ; H01B1/04 ; H01B1/08 ; H01J1/304 ; B23H9/00
Abstract:
The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.
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