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14 条记录 (耗时 0.011 秒)

    Aligned nanostructures on a tip
    1.
    发明授权
    Aligned nanostructures on a tip 有权
    对齐纳米结构在一个尖端

    公开(公告)号：US07917966B2

    公开(公告)日：2011-03-29

    申请号：US12196194

    申请日：2008-08-21

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： G01Q70/12

    CPC分类号： G01Q70/12 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/902 ,  Y10S977/947

    摘要： Techniques for fabricating carbon nanotubes aligned on a tip are provided. In one embodiment, a method for fabricating carbon nanotubes aligned on a tip includes forming nanostructures on the tip, and aligning the nanostructures on the tip using a fluid flowing on the tip.

    摘要翻译： 提供了用于制造在尖端上对齐的碳纳米管的技术。 在一个实施例中，用于制造在尖端上对准的碳纳米管的方法包括在尖端上形成纳米结构，并使用在尖端上流动的流体对准尖端上的纳米结构。

    Cooling device coated with carbon nanotube and of manufacturing the same
    2.
    发明申请
    Cooling device coated with carbon nanotube and of manufacturing the same 审中-公开
    涂有碳纳米管并制造其的冷却装置

    公开(公告)号：US20090059535A1

    公开(公告)日：2009-03-05

    申请号：US11988173

    申请日：2005-08-18

    申请人： Yong-Hyup Kim ,  Ho-Young Lee ,  Seung-Min Lee ,  Woo-Yong Sung ,  Tae-Jun Kang ,  Wal-Jun Kim ,  Jang-Won Yoon ,  Sun-Chang Yeon

    发明人： Yong-Hyup Kim ,  Ho-Young Lee ,  Seung-Min Lee ,  Woo-Yong Sung ,  Tae-Jun Kang ,  Wal-Jun Kim ,  Jang-Won Yoon ,  Sun-Chang Yeon

    IPC分类号： H05K7/20 ,  B05D1/18

    CPC分类号： H05K7/20427

    摘要： Provided are a cooling device coated with carbon nanotubes and method of manufacturing the same. Carbon nanotubes are dispersively coated on a surface of the cooling device that radiates generated by a predetermined apparatus or component through thermal exchange. Thus, a carbon nanotube structure is formed so that the cooling device can improve in a thermal radiation characteristic and become small-sized. As a result, electronic devices can be downscaled and heat generated by a highly integrated electronic circuit chip can be effectively radiated, thus increasing lifetime and performance of an operating circuit.

    摘要翻译： 提供涂覆有碳纳米管的冷却装置及其制造方法。 碳纳米管通过热交换分散地涂覆在由预定装置或部件产生的冷却装置的表面上。 因此，形成碳纳米管结构，使得冷却装置能够提高热辐射特性并变小。 结果，电子设备可以被缩小，并且可以有效地辐射由高度集成的电子电路芯片产生的热量，从而增加操作电路的寿命和性能。

    CONDUCTIVE NANOSTRUCTURE, METHOD FOR MOLDING SAME, AND METHOD FOR MANUFACTURING A FIELD EMITTER USING SAME
    4.
    发明申请
    CONDUCTIVE NANOSTRUCTURE, METHOD FOR MOLDING SAME, AND METHOD FOR MANUFACTURING A FIELD EMITTER USING SAME 有权
    导电性纳米结构，其成型方法以及使用其制造场致发射体的方法

    公开(公告)号：US20130134860A1

    公开(公告)日：2013-05-30

    申请号：US13704902

    申请日：2011-02-23

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： H01J9/02 ,  H01J1/304 ,  B23H9/00

    CPC分类号： H01J9/025 ,  B23H9/00 ,  H01B1/04 ,  H01B1/08 ,  H01J1/304 ,  H01J1/3044 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30449 ,  H01J2201/30469

    摘要： The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

    摘要翻译： 导电纳米结构体及其成型方法技术领域本发明涉及导电性纳米结构体，其成型方法及使用其的场致发射体的制造方法。 更具体地说，本发明涉及一种场致发射纳米结构，其包括导电衬底，布置在导电衬底上的导电纳米结构以及布置在导电衬底和导电纳米结构之间的界面中的导电界面化合物，以及一 其制造方法以及使用该场致发射体的制造方法。

    Field emission cathode capable of amplifying electron beam and methods of controlling electron beam density
    5.
    发明授权
    Field emission cathode capable of amplifying electron beam and methods of controlling electron beam density 有权
    能够放大电子束的场发射阴极和控制电子束密度的方法

    公开(公告)号：US08232716B2

    公开(公告)日：2012-07-31

    申请号：US13030065

    申请日：2011-02-17

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J23/34 ,  H01J29/98

    CPC分类号： H01J1/3044 ,  H01J29/023 ,  H01J29/04

    摘要： Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.

    摘要翻译： 提供场发射装置（FED）。 在一个实施例中，FED包括电子发射器，与电子发射器间隔开并具有第一开口和第二开口的管以及设置在管的外表面上的栅电极。 第一开口设置在与电子发射器相邻的管的一端，并且第二开口设置在管的另一端。 FED还包括与第二开口间隔开并收集从第二开口发射的二次电子的阳极。

    FIELD EMISSION CATHODE CAPABLE OF AMPLIFYING ELECTRON BEAM AND METHODS OF CONTROLLING ELECTRON BEAM DENSITY
    7.
    发明申请
    FIELD EMISSION CATHODE CAPABLE OF AMPLIFYING ELECTRON BEAM AND METHODS OF CONTROLLING ELECTRON BEAM DENSITY 有权
    放大电子束的场发射阴极和控制电子束密度的方法

    公开(公告)号：US20110140602A1

    公开(公告)日：2011-06-16

    申请号：US13030065

    申请日：2011-02-17

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： H01J29/98

    CPC分类号： H01J1/3044 ,  H01J29/023 ,  H01J29/04

    摘要： Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.

    摘要翻译： 提供场发射装置（FED）。 在一个实施例中，FED包括电子发射器，与电子发射器间隔开并具有第一开口和第二开口的管以及设置在管的外表面上的栅电极。 第一开口设置在与电子发射器相邻的管的一端，并且第二开口设置在管的另一端。 FED还包括与第二开口间隔开并收集从第二开口发射的二次电子的阳极。

    Field emission cathode capable of amplifying electron beam and methods of controlling electron beam density
    8.
    发明授权
    Field emission cathode capable of amplifying electron beam and methods of controlling electron beam density 有权
    能够放大电子束的场发射阴极和控制电子束密度的方法

    公开(公告)号：US07915800B2

    公开(公告)日：2011-03-29

    申请号：US12234491

    申请日：2008-09-19

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： H01J63/04 ,  H01J1/62 ,  H01K9/02

    CPC分类号： H01J1/3044 ,  H01J29/023 ,  H01J29/04

    摘要： Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.

    摘要翻译： 提供场发射装置（FED）。 在一个实施例中，FED包括电子发射器，与电子发射器间隔开并具有第一开口和第二开口的管以及设置在管的外表面上的栅电极。 第一开口设置在与电子发射器相邻的管的一端，并且第二开口设置在管的另一端。 FED还包括与第二开口间隔开并收集从第二开口发射的二次电子的阳极。

    ALIGNED NANOSTRUCTURES ON A TIP
    9.
    发明申请
    ALIGNED NANOSTRUCTURES ON A TIP 有权
    对齐的NANOSTRUCTURES在提示

    公开(公告)号：US20100047621A1

    公开(公告)日：2010-02-25

    申请号：US12196194

    申请日：2008-08-21

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： B32B3/08 ,  B05D1/18 ,  C25D5/02

    CPC分类号： G01Q70/12 ,  Y10S977/849 ,  Y10S977/86 ,  Y10S977/902 ,  Y10S977/947

    摘要： Techniques for fabricating carbon nanotubes aligned on a tip are provided. In one embodiment, a method for fabricating carbon nanotubes aligned on a tip includes forming nanostructures on the tip, and aligning the nanostructures on the tip using a fluid flowing on the tip.

    摘要翻译： 提供了用于制造在尖端上对准的碳纳米管的技术。 在一个实施例中，用于制造在尖端上对准的碳纳米管的方法包括在尖端上形成纳米结构，并使用在尖端上流动的流体对准尖端上的纳米结构。

    ELECTRON DENSITY CONTROLLABLE FIELD EMISSION DEVICES
    10.
    发明申请
    ELECTRON DENSITY CONTROLLABLE FIELD EMISSION DEVICES 有权
    电子密度可控场发射装置

    公开(公告)号：US20100045158A1

    公开(公告)日：2010-02-25

    申请号：US12234491

    申请日：2008-09-19

    申请人： Yong Hyup Kim ,  Wal Jun Kim

    发明人： Yong Hyup Kim ,  Wal Jun Kim

    IPC分类号： H01J1/52

    CPC分类号： H01J1/3044 ,  H01J29/023 ,  H01J29/04

    摘要： Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.

    摘要翻译： 提供场发射装置（FED）。 在一个实施例中，FED包括电子发射器，与电子发射器间隔开并具有第一开口和第二开口的管以及设置在管的外表面上的栅电极。 第一开口设置在与电子发射器相邻的管的一端，并且第二开口设置在管的另一端。 FED还包括与第二开口间隔开并收集从第二开口发射的二次电子的阳极。