Invention Grant
- Patent Title: Graphene structure and method of fabricating the same
- Patent Title (中): 石墨烯结构及其制造方法
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Application No.: US13229183Application Date: 2011-09-09
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Publication No.: US09230801B2Publication Date: 2016-01-05
- Inventor: Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
- Applicant: Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0124233 20101207
- Main IPC: B32B9/00
- IPC: B32B9/00 ; H01L21/02 ; C01B31/04
Abstract:
A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
Public/Granted literature
- US20120141700A1 GRAPHENE STRUCTURE AND METHOD OF FABRICATING THE SAME Public/Granted day:2012-06-07
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