公开(公告)号：US09181091B2

公开(公告)日：2015-11-10

申请号：US12959501

申请日：2010-12-03

Applicant: Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

Inventor： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Sun-hwak Woo

IPC: H01L21/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/06 ,  H01L31/0352 ,  B82Y30/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L31/035209 ,  H01L31/035227

Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Abstract translation: 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。

公开(公告)号：US08927414B2

公开(公告)日：2015-01-06

申请号：US13470487

申请日：2012-05-14

Applicant: Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

Inventor： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC: H01L21/4763 ,  H01L23/52

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

公开(公告)号：US08480931B2

公开(公告)日：2013-07-09

申请号：US12766258

申请日：2010-04-23

Applicant: Byoung-lyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang ,  Byung-sung Kim

Inventor： Byoung-lyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang ,  Byung-sung Kim

IPC: H01B1/04

CPC classification number: H01L29/413 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02527 ,  H01L21/02554 ,  H01L21/02639 ,  H01L21/02653 ,  H01L29/0665 ,  H01L29/0676 ,  H01L29/1606 ,  H01L51/0048

Abstract: A composite structure and a method of manufacturing the composite structure. The composite structure includes a graphene sheet; and a nanostructure oriented through the graphene sheet and having a substantially one-dimensional shape.

Abstract translation: 复合结构和复合结构的制造方法。 复合结构包括石墨烯片; 以及通过石墨烯片取向并具有基本上一维形状的纳米结构。

公开(公告)号：US20110244662A1

公开(公告)日：2011-10-06

申请号：US12976874

申请日：2010-12-22

Applicant: Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dong-mok WHANG ,  Jae-hyun LEE

Inventor： Eun-kyung LEE ,  Byoung-lyong CHOI ,  Dong-mok WHANG ,  Jae-hyun LEE

IPC: H01L21/20

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0272 ,  C23C16/26 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262

Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

Abstract translation: 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

公开(公告)号：US08007862B2

公开(公告)日：2011-08-30

申请号：US12057404

申请日：2008-03-28

Applicant: Su-mi Lee ,  Dong-mok Whang ,  Moon-gyu Lee ,  Yoon-sun Choi ,  Sun-hwak Woo

Inventor： Su-mi Lee ,  Dong-mok Whang ,  Moon-gyu Lee ,  Yoon-sun Choi ,  Sun-hwak Woo

IPC: B05D3/10

CPC classification number: C23C26/00 ,  B82Y20/00 ,  C23C4/123 ,  G02B5/3058 ,  G02B2207/101 ,  Y10T428/1041

Abstract: Provided are a method of preparing a nanowire grid polarizer, and a nanowire grid polarizer prepared using the same. The method includes: mixing a surfactant and a silica precursor to prepare a mesoporous film composition; coating the mesoporous film composition on a substrate; aging the coated product to form a silica template composite; removing the surfactant inside the silica template composite to prepare a mesoporous material having channels; and filling the channels of the mesoporous material with metal. The method is suitable for the formation of a nanowire having a stable structure, mass production, and large-area production.

Abstract translation: 提供制备纳米线栅极偏振器的方法和使用其制备的纳米线栅极偏振器。 该方法包括：混合表面活性剂和二氧化硅前体以制备中孔膜组合物; 将介孔膜组合物涂布在基材上; 老化涂层产品以形成二氧化硅模板复合材料; 除去二氧化硅模板复合材料中的表面活性剂以制备具有通道的介孔材料; 并用金属填充介孔材料的通道。 该方法适用于形成具有稳定结构，批量生产和大面积生产的纳米线。

公开(公告)号：US20110133153A1

公开(公告)日：2011-06-09

申请号：US12959501

申请日：2010-12-03

Applicant: Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Sun-hwak WOO

Inventor： Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Sun-hwak WOO

IPC: H01L29/06 ,  H01L21/02 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: B82Y40/00 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0665 ,  H01L31/035209 ,  H01L31/035227

Abstract: Provided are a porous nanostructure and a method of manufacturing the same. The porous nanostructure includes a plurality of pores disposed on an exterior surface of a nanostructure, wherein at least a portion of the plurality of pores extend inside the nanostructure.

Abstract translation: 提供一种多孔纳米结构及其制造方法。 多孔纳米结构包括设置在纳米结构的外表面上的多个孔，其中多个孔的至少一部分在纳米结构内部延伸。

公开(公告)号：US20100213434A1

公开(公告)日：2010-08-26

申请号：US12560768

申请日：2009-09-16

Applicant: Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Byung-sung KIM

Inventor： Eun-kyung LEE ,  Dong-mok WHANG ,  Byoung-lyong CHOI ,  Byung-sung KIM

IPC: H01L29/16 ,  H01L21/205

CPC classification number: H01L21/02532 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639

Abstract: A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.

Abstract translation: 一种合成纳米线的方法。 该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线 ） 方法。

公开(公告)号：US09230801B2

公开(公告)日：2016-01-05

申请号：US13229183

申请日：2011-09-09

Applicant: Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

Inventor： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC: B32B9/00 ,  H01L21/02 ,  C01B31/04

CPC classification number: H01L21/02381 ,  C01B32/182 ,  H01L21/02428 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/02606 ,  H01L21/02664 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

Abstract translation: 石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。 可以使用Ge形成石墨烯结构。

公开(公告)号：US08679976B2

公开(公告)日：2014-03-25

申请号：US12976874

申请日：2010-12-22

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

IPC: H01L21/44

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0272 ,  C23C16/26 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262

Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

Abstract translation: 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

公开(公告)号：US20120326115A1

公开(公告)日：2012-12-27

申请号：US13470487

申请日：2012-05-14

Applicant: Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

Inventor： Byoung-lyong CHOI ,  Eun-kyung LEE ,  Dong-mok WHANG

IPC: H01L29/12 ,  H01L21/20 ,  B82Y99/00 ,  B82Y40/00

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

Abstract translation: 石墨烯结构和石墨烯结构的制造方法以及石墨烯装置和石墨烯装置的制造方法。 石墨烯结构包括基材; 生长层，其设置在所述基板上并且具有暴露的侧表面; 以及设置在生长层的侧表面上的石墨烯层。