Invention Grant
US09230807B2 Systems and methods for ohmic contacts in silicon carbide devices
有权
用于在碳化硅器件中欧姆接触的系统和方法
- Patent Title: Systems and methods for ohmic contacts in silicon carbide devices
- Patent Title (中): 用于在碳化硅器件中欧姆接触的系统和方法
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Application No.: US13718031Application Date: 2012-12-18
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Publication No.: US09230807B2Publication Date: 2016-01-05
- Inventor: Zachary Matthew Stum , Reza Ghandi
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent John P. Darling
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/04 ; H01L29/45 ; H01L29/66 ; H01L29/78 ; H01L29/16
Abstract:
A silicon carbide device is presented that includes a gate electrode disposed over a portion of a silicon carbide substrate as well as a dielectric film disposed over the gate electrode. The device has a contact region disposed near the gate electrode and has a layer disposed over the dielectric film and over the contact region. The layer includes nickel in portions disposed over the dielectric film and includes nickel silicide in portions disposed over the contact region. The nickel silicide layer is configured to provide an ohmic contact to the contact region of the silicon carbide device.
Public/Granted literature
- US20140167068A1 SYSTEMS AND METHODS FOR OHMIC CONTACTS IN SILICON CARBIDE DEVICES Public/Granted day:2014-06-19
Information query
IPC分类:
