发明授权
- 专利标题: Solid-state image sensor and method of manufacturing the same
- 专利标题(中): 固态图像传感器及其制造方法
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申请号: US14099449申请日: 2013-12-06
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公开(公告)号: US09231019B2公开(公告)日: 2016-01-05
- 发明人: Mineo Shimotsusa
- 申请人: CANON KABUSHIKI KAISHA
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2012-269778 20121210
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/146
摘要:
A method of manufacturing a solid-state image sensor, includes forming a first isolation region of a first conductivity type in a semiconductor layer having first and second surfaces, the forming the first isolation region including first implantation for implanting ions into the semiconductor layer through the first surface, forming charge accumulation regions of a second conductivity type in the semiconductor layer, performing first annealing, forming an interconnection on a side of the first surface of the semiconductor layer after the first annealing, and forming a second isolation region of the first conductivity type in the semiconductor layer, the forming the second isolation region including second implantation for implanting ions into the semiconductor layer through the second surface. The first and second isolation regions are arranged between the adjacent charge accumulation regions.