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公开(公告)号：US20210370670A1
公开(公告)日：2021-12-02
申请号：US17313595
申请日：2021-05-06
发明人： Hiroyasu Nomura , Mineo Shimotsusa
摘要： A print element substrate, comprising a base, a heater provided on the base and configured to generate heat used to discharge ink, a flow path member, which forms an ink flow path, configured to form, together with the base, a bubbling chamber in which the ink is bubbled by the heat of the heater provided in a bottom surface of the bubbling chamber, and a temperature sensor capable of detecting a temperature of the bubbling chamber, the temperature sensor being formed of the same material as the heater and provided in the same layer as the heater on the base.
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公开(公告)号：US11102440B2
公开(公告)日：2021-08-24
申请号：US16393662
申请日：2019-04-24
IPC分类号： H04N5/369 , H01L27/02 , H01L27/28 , H01L27/146
摘要： A solid-state imaging device includes: a first semiconductor substrate including a photoelectric conversion element; and a second semiconductor substrate including at least a part of a peripheral circuit arranged in a main face of the second semiconductor substrate, the peripheral circuit generating a signal based on the charge of the photoelectric conversion element, a main face of the first semiconductor substrate and the main face of the second semiconductor substrate being opposed to each other with sandwiching a wiring structure therebetween; a pad to be connected to an external terminal; and a protection circuit electrically connected to the pad and to the peripheral circuit, wherein the protection circuit is arranged in the main face of the second semiconductor substrate.
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公开(公告)号：US10998368B2
公开(公告)日：2021-05-04
申请号：US16258200
申请日：2019-01-25
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L21/768 , H01L23/00 , H01L23/48 , H01L25/065
摘要： A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer.
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4.发明授权公开(公告)号：US10937822B2
公开(公告)日：2021-03-02
申请号：US16286284
申请日：2019-02-26
IPC分类号： H01L27/146
摘要： A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.
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5.发明授权公开(公告)号：US10882314B2
公开(公告)日：2021-01-05
申请号：US16654341
申请日：2019-10-16
摘要： A liquid ejection head and its manufacturing method are capable of reducing the thickness of a protective layer as compared to the traditional technique so as to efficiently transfer the heat energy generated by a heating resistance element to a droplet of liquid such as ink. To achieve this, power supply wirings are provided in the same layer below the heating resistance element.
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公开(公告)号：US20190308415A1
公开(公告)日：2019-10-10
申请号：US16369263
申请日：2019-03-29
IPC分类号： B41J2/14
摘要： Provided is an element substrate with suppressed variations in resistance though having a high resistance. In an element substrate equipped with a heat generating resistor that generates thermal energy for ejecting a liquid, the heat generating resistor is a stacked structure having stacked a plurality of resistor layers including a first resistor layer and a second resistor layer containing a metal silicon nitride and the first resistor layer and the second resistor layer are different from each other in at least one of a silicon content in the metal silicon oxide and a metal element contained in the metal silicon nitride.
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公开(公告)号：US20190148446A1
公开(公告)日：2019-05-16
申请号：US16242835
申请日：2019-01-08
发明人： Mineo Shimotsusa
IPC分类号： H01L27/146 , H01L31/09
摘要： A solid-state image pickup device capable of suppressing the generation of dark current and/or leakage current is provided. The solid-state image pickup device has a first substrate provided with a photoelectric converter on its primary face, a first wiring structure having a first bonding portion which contains a conductive material, a second substrate provided with a part of a peripheral circuit on its primary face, and a second wiring structure having a second bonding portion which contains a conductive material. In addition, the first bonding portion and the second bonding portion are bonded so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. Furthermore, the conductive material of the first bonding portion and the conductive material of the second bonding portion are surrounded with diffusion preventing films.
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公开(公告)号：US20190068903A1
公开(公告)日：2019-02-28
申请号：US16170433
申请日：2018-10-25
发明人： Mineo Shimotsusa , Masatsugu Itahashi , Masahiro Kobayashi , Kazunari Kawabata , Takeshi Ichikawa
IPC分类号： H04N5/369 , H04N5/238 , H01L27/146 , H04N5/3745
摘要： Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the control electrode of the transistor and a second portion that covers a part of the photoelectric conversion unit, the output portion and the photoelectric conversion unit are arranged with an interval therebetween, the interval between the output portion and the photoelectric conversion unit is larger than an interval between a lower end of the second portion of the light-shielding portion and the photoelectric conversion unit, and the interval between the output portion and the photoelectric conversion unit is smaller than an interval between an upper end of the second portion of the light-shielding portion and the photoelectric conversion unit.
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公开(公告)号：US09881957B2
公开(公告)日：2018-01-30
申请号：US15155931
申请日：2016-05-16
IPC分类号： H01L27/146 , H01L31/024 , H01L23/00
CPC分类号： H01L27/14634 , H01L24/05 , H01L27/14618 , H01L27/14621 , H01L27/14687 , H01L27/1469 , H01L31/024 , H01L2224/02166 , H01L2224/04042 , H01L2224/48463 , H01L2924/12042 , H01L2924/12043 , H01L2924/13091 , H01L2924/351 , H01L2924/00
摘要： A photoelectric conversion device includes a first semiconductor substrate including a photoelectric conversion unit for generating a signal charge in accordance with an incident light, and a second semiconductor substrate including a signal processing unit for processing an electrical signal on the basis of the signal charge generated in the photoelectric conversion unit. The signal processing unit is situated in an orthogonal projection area from the photoelectric conversion unit to the second semiconductor substrate. A multilayer film including a plurality of insulator layers is provided between the first semiconductor substrate and the second semiconductor substrate. The thickness of the second semiconductor substrate is smaller than 500 micrometers. The thickness of the second semiconductor substrate is greater than the distance from the second semiconductor substrate and a light-receiving surface of the first semiconductor substrate.
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公开(公告)号：US20180007300A1
公开(公告)日：2018-01-04
申请号：US15702097
申请日：2017-09-12
发明人： Mineo Shimotsusa , Fumihiro Inui
IPC分类号： H04N5/378 , H01L27/146
CPC分类号： H04N5/378 , H01L27/14601 , H01L27/14609 , H01L27/14612 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L27/14643 , H01L27/14683
摘要： A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region (FD), and a transferring transistor are provided. In the second pixel region, an amplifying transistor, and a resetting transistor are provided. A first element isolation portion is provided in the first pixel region, while a second element isolation portion is provided in the second pixel region. An amount of protrusion of an insulating film into a semiconductor substrate in the first element isolation portion is smaller, than that in the second element isolation portion.
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