Invention Grant
US09231097B2 HVMOS transistor structure having offset distance and method for fabricating the same 有权
具有偏移距离的HVMOS晶体管结构及其制造方法

HVMOS transistor structure having offset distance and method for fabricating the same
Abstract:
An HVMOS transistor structure includes: a first ion well of a first conductivity type and a second ion well of a second conductivity type different from the first conductivity type formed over a substrate, wherein the first ion well and the second ion well have a junction at their interface; a gate overlying the first ion well and the second ion well; a drain region of the first conductivity type, in the first ion well, spaced apart from a first sidewall of the gate by an offset distance; and a source region of the first conductivity type in the second ion well. In addition, a method for fabricating the HVMOS transistor structure described above is also provided.
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