Invention Grant
US09231097B2 HVMOS transistor structure having offset distance and method for fabricating the same
有权
具有偏移距离的HVMOS晶体管结构及其制造方法
- Patent Title: HVMOS transistor structure having offset distance and method for fabricating the same
- Patent Title (中): 具有偏移距离的HVMOS晶体管结构及其制造方法
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Application No.: US13760354Application Date: 2013-02-06
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Publication No.: US09231097B2Publication Date: 2016-01-05
- Inventor: Ming-Cheng Lee
- Applicant: MediaTek Inc.
- Applicant Address: TW Hsin-Chu
- Assignee: MEDIATEK INC.
- Current Assignee: MEDIATEK INC.
- Current Assignee Address: TW Hsin-Chu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/45 ; H01L29/49 ; H01L29/08

Abstract:
An HVMOS transistor structure includes: a first ion well of a first conductivity type and a second ion well of a second conductivity type different from the first conductivity type formed over a substrate, wherein the first ion well and the second ion well have a junction at their interface; a gate overlying the first ion well and the second ion well; a drain region of the first conductivity type, in the first ion well, spaced apart from a first sidewall of the gate by an offset distance; and a source region of the first conductivity type in the second ion well. In addition, a method for fabricating the HVMOS transistor structure described above is also provided.
Public/Granted literature
- US20130200445A1 HVMOS TRANSISTOR STRUCTURE HAVING OFFSET DISTANCE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-08-08
Information query
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