Invention Grant
- Patent Title: Vertical MOSFET transistor, in particular operating as a selector in nonvolatile memory devices
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Application No.: US14277150Application Date: 2014-05-14
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Publication No.: US09231103B2Publication Date: 2016-01-05
- Inventor: Fabio Pellizzer , Agostino Pirovano
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: EP05425261 20050427
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/24 ; H01L29/423 ; H01L45/00 ; H01L29/66 ; G11C13/00
Abstract:
A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region.
Public/Granted literature
- US20140239244A1 VERTICAL MOSFET TRANSISTOR, IN PARTICULAR OPERATING AS A SELECTOR IN NONVOLATILE MEMORY DEVICES Public/Granted day:2014-08-28
Information query
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