Invention Grant
US09231376B2 Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
有权
用于生长和制造半极性(Ga,Al,In,B)N薄膜,异质结构和器件的技术
- Patent Title: Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
- Patent Title (中): 用于生长和制造半极性(Ga,Al,In,B)N薄膜,异质结构和器件的技术
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Application No.: US14229674Application Date: 2014-03-28
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Publication No.: US09231376B2Publication Date: 2016-01-05
- Inventor: Robert M. Farrell, Jr. , Troy J. Baker , Arpan Chakraborty , Benjamin A. Haskell , P. Morgan Pattison , Rajat Sharma , Umesh K. Mishra , Steven P. DenBaars , James S. Speck , Shuji Nakamura
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Kawaguchi, Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/30
- IPC: H01L33/30 ; H01S5/343 ; B82Y20/00 ; C30B23/02 ; C30B25/18 ; C30B29/40 ; H01L21/02 ; H01L33/00 ; H01S5/042 ; H01S5/22 ; H01S5/32

Abstract:
A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.
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