Invention Grant
- Patent Title: Highly linear buffer
- Patent Title (中): 高度线性缓冲
-
Application No.: US14074241Application Date: 2013-11-07
-
Publication No.: US09231579B2Publication Date: 2016-01-05
- Inventor: Ruifeng Sun , Mustafa H. Koroglu , Ramin Khoini Poorfard , Yu Su , Krishna Pentakota , Pio Balmelli
- Applicant: SILICON LABORATORIES INC.
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; H03K17/16

Abstract:
Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor.
Public/Granted literature
- US20150123714A1 HIGHLY LINEAR BUFFER Public/Granted day:2015-05-07
Information query