Invention Grant
US09234120B2 Method for applying a first metal onto a second metal, an isolator or semiconductor substrate, and the respective binding units
有权
用于将第一金属施加到第二金属，隔离器或半导体衬底上的方法以及各自的结合单元
- Patent Title: Method for applying a first metal onto a second metal, an isolator or semiconductor substrate, and the respective binding units
- Patent Title (中): 用于将第一金属施加到第二金属，隔离器或半导体衬底上的方法以及各自的结合单元
-
Application No.: US13813652Application Date: 2011-08-12
-
Publication No.: US09234120B2Publication Date: 2016-01-12
- Inventor: Manfred Wiessler , Peter Lorenz , Heinz Fleischhacker , Ranjita Ghosh-Moulick , Sandra Gilles , Dirk Mayer , Andreas Offenhaeusser
- Applicant: Manfred Wiessler , Peter Lorenz , Heinz Fleischhacker , Karola Ursula Fleischhacker , Marlen Fleischhacker , Nadja Fleischhacker , Ranjita Ghosh-Moulick , Sandra Gilles , Dirk Mayer , Andreas Offenhaeusser
- Applicant Address: DE Heidelberg DE Juelich
- Assignee: DEUTSCHES KREBSFORSCHUNGSZENTRUM,FORSCHUNGSZENTRUM JUELICH GMBH
- Current Assignee: DEUTSCHES KREBSFORSCHUNGSZENTRUM,FORSCHUNGSZENTRUM JUELICH GMBH
- Current Assignee Address: DE Heidelberg DE Juelich
- Agency: Hultquist, PLLC
- Agent Steven J. Hultquist; Mary B. Grant
- Priority: EP10008481 20100813
- International Application: PCT/EP2011/004074 WO 20110812
- International Announcement: WO2012/019779 WO 20120216
- Main IPC: C09J5/00
- IPC: C09J5/00 ; C07D403/04 ; C07D403/12 ; C07F7/18 ; H01L51/00
Abstract:
The present invention concerns a method for applying a first metal onto a second metal, an isolator or semiconductor substrate by a Diels-Alder reaction, in particular a Diels-Alder reaction with inverse electron demand. The present invention further concerns the binding units L 1960 and F 160.
Public/Granted literature
Information query
