Invention Grant
US09234859B2 Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology
有权
用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的
- Patent Title: Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology
- Patent Title (中): 用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的
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Application No.: US14226554Application Date: 2014-03-26
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Publication No.: US09234859B2Publication Date: 2016-01-12
- Inventor: Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
- Applicant: STMicroelectronics S.r.l. , STMicroelectronics (Crolles 2) SAS
- Applicant Address: IT Agrate Brianza FR Crolles
- Assignee: STMicroelectronics S.r.l.,STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics S.r.l.,STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: IT Agrate Brianza FR Crolles
- Agency: Seed IP Law Group PLLC
- Priority: ITTO2013A0257 20130328
- Main IPC: H01L29/02
- IPC: H01L29/02 ; G01N27/12 ; G01N27/22 ; H01L49/02
Abstract:
An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
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