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1.发明授权Integrated device of a capacitive type for detecting humidity, in particular manufactured using a CMOS technology 有权用于检测湿度的电容式集成装置，特别是使用CMOS技术制造的公开(公告)号：US09234859B2
公开(公告)日：2016-01-12
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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2.发明申请INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY 有权用于检测湿度的电容式集成装置，特别是采用CMOS技术制造公开(公告)号：US20140291778A1
公开(公告)日：2014-10-02
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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