发明授权
US09235668B1 Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
有权
用于计算双栅极晶体管的栅极界面处的电荷密度的计算机实现的方法
- 专利标题： Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
- 专利标题（中）： 用于计算双栅极晶体管的栅极界面处的电荷密度的计算机实现的方法
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申请号： US14332907申请日： 2014-07-16
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公开(公告)号： US09235668B1公开(公告)日： 2016-01-12
- 发明人: Thierry Poiroux , Marie-Anne Jaud , Sebastien Martinie , Olivier Rozeau
- 申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址： FR Paris
- 专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： FR Paris
- 代理机构： Pillsbury Winthrop Shaw Pittman LLP
- 主分类号： G06F17/50
- IPC分类号： G06F17/50 ; H01L29/786
摘要：
A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function fzero(q1) able to be nullified by a correct value of the charge density q1 of the first gate.
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