Invention Grant
US09235668B1 Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
有权
用于计算双栅极晶体管的栅极界面处的电荷密度的计算机实现的方法
- Patent Title: Computer implemented method for calculating a charge density at a gate interface of a double gate transistor
- Patent Title (中): 用于计算双栅极晶体管的栅极界面处的电荷密度的计算机实现的方法
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Application No.: US14332907Application Date: 2014-07-16
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Publication No.: US09235668B1Publication Date: 2016-01-12
- Inventor: Thierry Poiroux , Marie-Anne Jaud , Sebastien Martinie , Olivier Rozeau
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L29/786
Abstract:
A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function fzero(q1) able to be nullified by a correct value of the charge density q1 of the first gate.
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