Invention Grant
US09236267B2 Cut-mask patterning process for fin-like field effect transistor (FinFET) device
有权
鳍状场效应晶体管（FinFET）器件的切割掩模图案化工艺
- Patent Title: Cut-mask patterning process for fin-like field effect transistor (FinFET) device
- Patent Title (中): 鳍状场效应晶体管（FinFET）器件的切割掩模图案化工艺
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Application No.: US13369818Application Date: 2012-02-09
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Publication No.: US09236267B2Publication Date: 2016-01-12
- Inventor: Ho Wei De , Kuei-Liang Lu , Ming-Feng Shieh , Ching-Yu Chang
- Applicant: Ho Wei De , Kuei-Liang Lu , Ming-Feng Shieh , Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/84 ; H01L27/12
Abstract:
A method for patterning a plurality of features in a non-rectangular pattern, such as on an integrated circuit device, includes providing a substrate including a surface with a plurality of elongated protrusions, the elongated protrusions extending in a first direction. A first layer is formed above the surface and above the plurality of elongated protrusions, and patterned with an end cutting mask. The end cutting mask includes two nearly-adjacent patterns with a sub-resolution feature positioned and configured such that when the resulting pattern on the first layer includes the two nearly adjacent patterns and a connection there between. The method further includes cutting ends of the elongated protrusions using the pattern on the first layer.
Public/Granted literature
- US20130210232A1 CUT-MASK PATTERNING PROCESS FOR FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) DEVICE Public/Granted day:2013-08-15
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