Invention Grant
US09236271B2 Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning
有权
III族氮化物膜的激光起始剥离和层转移和图案化的应用
- Patent Title: Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning
- Patent Title (中): III族氮化物膜的激光起始剥离和层转移和图案化的应用
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Application No.: US13749330Application Date: 2013-01-24
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Publication No.: US09236271B2Publication Date: 2016-01-12
- Inventor: Can Bayram , Stephen W. Bedell , Devendra K. Sadana , Katherine L. Saenger
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/428 ; H01L21/18 ; H01L33/00 ; H01L21/683
Abstract:
A pulsed laser-initiated exfoliation method for patterning a Group III-nitride film on a growth substrate is provided. This method includes providing a Group III-nitride film a growth substrate, wherein a growth substrate/Group III-nitride film interface is present between the Group III-nitride film and the growth substrate. Next, a laser is selected that provides radiation at a wavelength at which the Group III-nitride film is transparent and the growth substrate is absorbing. The interface is then irradiated with pulsed laser radiation from the Group III-nitride film side of the growth substrate/Group III-nitride film interface to exfoliate a region of the Group III-nitride from the growth substrate. A method for transfer a Group-III nitride film from a growth substrate to a handle substrate is also provided.
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