公开(公告)号：US09236251B2

公开(公告)日：2016-01-12

申请号：US14705425

申请日：2015-05-06

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Cheng-Wei Cheng ,  Tak H. Ning ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01L21/02 ,  H01L29/267 ,  H01L29/06

CPC classification number: H01L21/0254 ,  H01L21/02365 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/2007 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/267

Abstract: Various methods to integrate a Group III nitride material on a silicon material are provided. In one embodiment, the method includes providing a structure including a (100) silicon layer, a (111) silicon layer located on an uppermost surface of the (100) silicon layer, a Group III nitride material layer located on an uppermost surface of the (111) silicon layer, and a blanket layer of dielectric material located on an uppermost surface of the Group III nitride material layer. Next, an opening is formed through the blanket layer of dielectric material, the Group III nitride material layer, the (111) Si layer and within a portion of the (100) silicon layer. A dielectric spacer is then formed within the opening. An epitaxial semiconductor material is then formed on an exposed surface of the (100) silicon layer within the opening and thereafter planarization is performed.

公开(公告)号：US09391144B2

公开(公告)日：2016-07-12

申请号：US14725581

申请日：2015-05-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Cheng-Wei Cheng ,  Devendra K. Sadana ,  Kuen-Ting Shiu

IPC: H01L29/20 ,  H01L21/02 ,  H01L29/04 ,  H01L23/528 ,  H01L27/088 ,  H01L29/205 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L29/2003 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02658 ,  H01L23/528 ,  H01L27/088 ,  H01L29/04 ,  H01L29/045 ,  H01L29/205 ,  H01L33/007 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane. This structure further includes an epitaxial semiconductor material located on an uppermost surface of the (100) silicon substrate, and a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of the epitaxial semiconductor material. The structure also includes at least one semiconductor device located upon and within the gallium nitride material and at least one other semiconductor device located upon and within the epitaxial semiconductor material.

Abstract translation: 一种半导体结构，包括具有位于硅衬底内的多个开口的（100）硅衬底，其中每个开口暴露具有（111）晶面的硅衬底的表面。 该结构还包括位于（100）硅衬底的最上表面上的外延半导体材料和位于与具有（111）晶面并且与外延半导体的一部分相邻的硅衬底的表面附近的氮化镓材料 材料。 该结构还包括位于氮化镓材料之上和之内的至少一个半导体器件和位于外延半导体材料之上和之内的至少一个其它半导体器件。

公开(公告)号：US09574287B2

公开(公告)日：2017-02-21

申请号：US14038139

申请日：2013-09-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Christos D. Dimitrakopoulos ,  Keith E. Fogel ,  Jeehwan Kim ,  John A. Ott ,  Devendra K. Sadana

IPC: C30B25/00 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/16 ,  H01L33/00 ,  H01L33/32 ,  C30B29/02 ,  H01L33/12

CPC classification number: C30B25/18 ,  C30B25/183 ,  C30B29/02 ,  C30B29/406 ,  H01L21/0254 ,  H01L29/1606 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32

Abstract: A method of forming an epitaxial semiconductor material that includes forming a graphene layer on a semiconductor and carbon containing substrate and depositing a metal containing monolayer on the graphene layer. An epitaxial layer of a gallium containing material is formed on the metal containing monolayer. A layered stack of the metal containing monolayer and the epitaxial layer of gallium containing material is cleaved from the graphene layer that is present on the semiconductor and carbon containing substrate.

Abstract translation: 一种形成外延半导体材料的方法，其包括在半导体和含碳衬底上形成石墨烯层并在所述石墨烯层上沉积含金属的单层。 在含金属单层上形成含镓材料的外延层。 含有金属的单层的层叠堆叠和含镓材料的外延层从存在于半导体和含碳衬底上的石墨烯层切割。

公开(公告)号：US09236271B2

公开(公告)日：2016-01-12

申请号：US13749330

申请日：2013-01-24

Applicant: GLOBALFOUNDRIES INC.

Inventor： Can Bayram ,  Stephen W. Bedell ,  Devendra K. Sadana ,  Katherine L. Saenger

IPC: H01L21/30 ,  H01L21/46 ,  H01L21/428 ,  H01L21/18 ,  H01L33/00 ,  H01L21/683

CPC classification number: H01L21/428 ,  H01L21/18 ,  H01L21/185 ,  H01L21/6835 ,  H01L21/6836 ,  H01L33/0079 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/68386

Abstract: A pulsed laser-initiated exfoliation method for patterning a Group III-nitride film on a growth substrate is provided. This method includes providing a Group III-nitride film a growth substrate, wherein a growth substrate/Group III-nitride film interface is present between the Group III-nitride film and the growth substrate. Next, a laser is selected that provides radiation at a wavelength at which the Group III-nitride film is transparent and the growth substrate is absorbing. The interface is then irradiated with pulsed laser radiation from the Group III-nitride film side of the growth substrate/Group III-nitride film interface to exfoliate a region of the Group III-nitride from the growth substrate. A method for transfer a Group-III nitride film from a growth substrate to a handle substrate is also provided.

Abstract translation: 提供了用于在生长衬底上图案化III族氮化物膜的脉冲激光起始剥离方法。 该方法包括提供III族氮化物膜生长衬底，其中在III族氮化物膜和生长衬底之间存在生长衬底/ III族氮化物膜界面。 接下来，选择提供在III族氮化物膜透明并且生长衬底吸收的波长处的辐射的激光。 然后用生长衬底/ III族氮化物膜界面的III族氮化物膜侧的脉冲激光辐射照射该界面，以从生长衬底剥离III族氮化物的区域。 还提供了将III族氮化物膜从生长衬底转移到手柄衬底的方法。