Invention Grant
US09236301B2 Customized alleviation of stresses generated by through-substrate via(S) 有权
定制缓解通过(S)通过底物产生的应力,

Customized alleviation of stresses generated by through-substrate via(S)
Abstract:
Fabrication of through-substrate via (TSV) structures is facilitated by: forming at least one stress buffer within a substrate; forming a through-substrate via contact within the substrate, wherein the through-substrate via structure and the stress buffer(s) are disposed adjacent to or in contact with each other; and where the stress buffer(s) includes a configuration or is disposed at a location relative to the through-substrate via conductor, at least in part, according to whether the TSV structure is an isolated TSV structure, a chained TSV structure, or an arrayed TSV structure, to customize stress alleviation by the stress buffer(s) about the through-substrate via conductor based, at least in part, on the type of TSV structure.
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