发明授权
- 专利标题: Methods and apparatus for heat spreader on silicon
- 专利标题(中): 散热器在硅上的方法和装置
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申请号: US13444558申请日: 2012-04-11
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公开(公告)号: US09236322B2公开(公告)日: 2016-01-12
- 发明人: Hsien-Wei Chen , Chung-Ying Yang , Chao-Wen Shih , Kai-Chiang Wu
- 申请人: Hsien-Wei Chen , Chung-Ying Yang , Chao-Wen Shih , Kai-Chiang Wu
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L23/34
- IPC分类号: H01L23/34 ; H01L23/367
摘要:
Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump.
公开/授权文献
- US20130270686A1 METHODS AND APPARATUS FOR HEAT SPREADER ON SILICON 公开/授权日:2013-10-17