Invention Grant
- Patent Title: FinFET device containing a composite spacer structure
- Patent Title (中): 包含复合间隔结构的FinFET器件
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Application No.: US14172365Application Date: 2014-02-04
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Publication No.: US09236397B2Publication Date: 2016-01-12
- Inventor: Judson R. Holt , Jinghong Li , Sanjay Mehta , Alexander Reznicek , Dominic J. Schepis
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/088 ; H01L21/8234 ; H01L29/16 ; H01L21/84 ; H01L29/66 ; H01L21/02 ; H01L21/265
Abstract:
A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.
Public/Granted literature
- US20150221676A1 FinFET DEVICE CONTAINING A COMPOSITE SPACER STRUCTURE Public/Granted day:2015-08-06
Information query
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