公开(公告)号：US09673296B2

公开(公告)日：2017-06-06

申请号：US14937029

申请日：2015-11-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Thomas N. Adam ,  Kangguo Cheng ,  Ali Khakifirooz ,  Jinghong Li ,  Alexander Reznicek

IPC: H01L29/76 ,  H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L21/02 ,  H01L21/84

CPC classification number: H01L29/66636 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/84 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/78

Abstract: A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.

公开(公告)号：US09236397B2

公开(公告)日：2016-01-12

申请号：US14172365

申请日：2014-02-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Judson R. Holt ,  Jinghong Li ,  Sanjay Mehta ,  Alexander Reznicek ,  Dominic J. Schepis

IPC: H01L27/12 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/16 ,  H01L21/84 ,  H01L29/66 ,  H01L21/02 ,  H01L21/265

CPC classification number: H01L27/1211 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02255 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/26506 ,  H01L21/31155 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L29/16 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795

Abstract: A composite spacer structure is formed on vertical sidewalls of a gate structure that is formed straddling a semiconductor fin. In one embodiment, the composite spacer structure includes an inner low-k dielectric material portion and an outer nitride material portion.

Abstract translation: 在跨越半导体鳍片的栅极结构的垂直侧壁上形成复合间隔物结构。 在一个实施例中，复合间隔物结构包括内部低k电介质材料部分和外部氮化物材料部分。