Invention Grant
US09236421B2 In-cell active matrix OLED touch display panel structure of narrow border 有权
单元格有源矩阵OLED触摸显示屏结构窄边框

In-cell active matrix OLED touch display panel structure of narrow border
Abstract:
An in-cell active matrix OLED touch panel structure of narrow border includes first and second substrates, an OLED layer configured between the first and second substrates, first and second sensing electrode layers, and a thin film transistor layer. The first sensing electrode layer includes M first conductor blocks and N connection lines arranged in a first direction. The second sensing electrode layer includes N second conductor blocks arranged in a second direction. Each second conductor block makes use of a corresponding i-th connection line to be extended to one edge of the panel structure. The thin film transistor layer includes K gate lines and L source lines. The M first conductor blocks, the N connection lines, and the N second conductor blocks are disposed at positions corresponding to those of the K gate lines and L source lines of the thin film transistor layer.
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