Invention Grant
- Patent Title: Method for manufacturing a fin MOS transistor
- Patent Title (中): 制造鳍式MOS晶体管的方法
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Application No.: US14193833Application Date: 2014-02-28
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Publication No.: US09236478B2Publication Date: 2016-01-12
- Inventor: Yves Morand , Romain Wacquez , Laurent Grenouillet , Yannick Le Tiec , Maud Vinet
- Applicant: STMicroelectronics S.A. , Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Montrouge FR Paris
- Assignee: STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics SA,Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Montrouge FR Paris
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1351827 20130301
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
A method for manufacturing a fin MOS transistor from an SOI-type structure including a semiconductor layer on a silicon oxide layer coating a semiconductor support, this method including the steps of: a) forming, from the surface of the semiconductor layer, at least one trench delimiting at least one fin in the semiconductor layer and extending all the way to the surface of the semiconductor support; b) etching the sides of a portion of the silicon oxide layer located under the fin to form at least one recess under the fin; and c) filling the recess with a material selectively etchable over silicon oxide.
Public/Granted literature
- US20140246723A1 METHOD FOR MANUFACTURING A FIN MOS TRANSISTOR Public/Granted day:2014-09-04
Information query
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