Invention Grant
- Patent Title: Light emitting diode and method for manufacturing same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14368268Application Date: 2012-12-21
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Publication No.: US09236533B2Publication Date: 2016-01-12
- Inventor: Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: Seoul Viosys Co., Ltd.
- Current Assignee: Seoul Viosys Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2011-0141449 20111223; KR10-2012-0020540 20120228; KR10-2012-0023822 20120308; KR10-2012-0024687 20120309
- International Application: PCT/KR2012/011257 WO 20121221
- International Announcement: WO2013/095037 WO 20130627
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L33/44 ; H01L33/22 ; H01L33/38 ; H01L33/32 ; H01L33/00 ; H01L33/20

Abstract:
Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.
Public/Granted literature
- US20140367722A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2014-12-18
Information query
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