Invention Grant
- Patent Title: Method of manufacturing frequency tunable terahertz transceiver
- Patent Title (中): 频率可调谐太赫兹收发器的制造方法
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Application No.: US14176838Application Date: 2014-02-10
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Publication No.: US09236711B2Publication Date: 2016-01-12
- Inventor: Kyung Hyun Park
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2010-009182 20100917
- Main IPC: H01S5/10
- IPC: H01S5/10 ; H01S5/0625 ; G02F1/35 ; H01S5/00 ; H01S5/026 ; H01S5/042 ; H01S5/06 ; H01S5/12 ; H01S5/40

Abstract:
A method of manufacturing a frequency tunable terahertz transceiver including two separate distributed feedback lasers manufactured in one substrate, includes forming a lower clad layer on the substrate, forming an active layer on the lower clad layer, forming an upper clad layer on the active layer. And interposing first and second diffraction grating layers between the upper clad layers. A diffraction grating is manufactured by etching the first and second diffraction grating layers. The active layer is integrated into a passive waveguide. An electrode is formed on the upper clad layer.
Public/Granted literature
- US20140154822A1 METHOD OF MANUFACTURING FREQUENCY TUNABLE TERAHERTZ TRANSCEIVER Public/Granted day:2014-06-05
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