Invention Grant
- Patent Title: Multilayer structure for a diamond growth and a method of providing the same
- Patent Title (中): 用于钻石生长的多层结构及其提供方法
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Application No.: US12929567Application Date: 2011-02-01
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Publication No.: US09238875B2Publication Date: 2016-01-19
- Inventor: Hexiang Zhu , Karl Pearson , Joo Ro Kim
- Applicant: Hexiang Zhu , Karl Pearson , Joo Ro Kim
- Applicant Address: SG Singapore
- Assignee: Sunset Peak International Limited
- Current Assignee: Sunset Peak International Limited
- Current Assignee Address: SG Singapore
- Agency: Fish & Richardson P.C.
- Main IPC: C30B29/04
- IPC: C30B29/04 ; B01J3/06
Abstract:
A multi-layer structure in a reaction cell for a diamond growth is provided. The multi-layer structure includes: a diamond seed; a first metal catalyst layer provided on the diamond seed, the first metal catalyst layer containing a first concentration of carbon; a second metal catalyst layer provided on the first metal layer, the second metal catalyst layer containing a second concentration of carbon that is higher than the first concentration; and a carbon source layer provided on the second metal layer.
Public/Granted literature
- US20120192785A1 Multilayer structure for a diamond growth and a method of providing the same Public/Granted day:2012-08-02
Information query
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