Invention Grant
US09240461B2 Method for fabricating semiconductor device 有权
制造半导体器件的方法

Method for fabricating semiconductor device
Abstract:
A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0