Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13932047Application Date: 2013-07-01
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Publication No.: US09240461B2Publication Date: 2016-01-19
- Inventor: Seok-Hoon Kim , Dong-Chan Suh , Byeong-Chan Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0079355 20120720
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L29/66 ; H01L21/764 ; H01L29/78 ; H01L29/165 ; H01L29/49 ; H01L29/51

Abstract:
A method for fabricating a semiconductor device comprises forming a dummy gate pattern and a spacer that is arranged on a sidewall of the dummy gate pattern on a substrate, forming an air gap on both sides of the dummy gate pattern by removing the spacer, exposing the substrate by removing the dummy gate pattern, and sequentially forming a gate insulating film including a high-k insulating film and a metal gate electrode on the exposed substrate.
Public/Granted literature
- US20140024192A1 Method for Fabricating Semiconductor Device Public/Granted day:2014-01-23
Information query
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