发明授权
- 专利标题： Boost system for dual-port SRAM
- 专利标题（中）： 双端口SRAM的升压系统
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申请号： US14220025申请日： 2014-03-19
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公开(公告)号： US09245615B2公开(公告)日： 2016-01-26
- 发明人: Ching-Wei Wu , He-Zhou Wan , Ming-En Bu , Xiuli Yang , Cheng Hung Lee , Mu-Jen Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT, P.C.
- 代理商 Anthony King
- 优先权： CN201410074379 20140303
- 主分类号： G11C11/419
- IPC分类号： G11C11/419
摘要：
A boost system for dual-port SRAM includes a comparator and a boost circuit. The comparator is configured to compare a first row address of a first port and a second row address of a second port, and output a first enable signal. The boost circuit is configured to boost a voltage difference between a first voltage source and a second voltage source according to the first enable signal.
公开/授权文献
- US20150248928A1 BOOST SYSTEM FOR DUAL-PORT SRAM 公开/授权日：2015-09-03
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