Invention Grant
- Patent Title: Plasma treatment of low-K surface to improve barrier deposition
- Patent Title (中): 等离子体处理低K面以改善屏障沉积
-
Application No.: US14135182Application Date: 2013-12-19
-
Publication No.: US09245793B2Publication Date: 2016-01-26
- Inventor: Ratsamee Limdulpaiboon , Frank Greer , Chi-I Lang , J. Watanabe , Wenxian Zhu
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/768 ; H01L21/3105 ; H01J37/32
Abstract:
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.
Public/Granted literature
- US20150179509A1 Plasma Treatment of Low-K Surface to Improve Barrier Deposition Public/Granted day:2015-06-25
Information query
IPC分类:
