Invention Grant
- Patent Title: Radio frequency power device
- Patent Title (中): 射频功率器件
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Application No.: US14324349Application Date: 2014-07-07
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Publication No.: US09245837B1Publication Date: 2016-01-26
- Inventor: Eljurey Azcarraga Fajardo , Siti Maznah Abdul Rahim , Victor dela cruz Del Rosario , Xavier Arokiasamy , Vittal Raja Manikam
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L23/498 ; B23K31/02 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
An electronic RF power device includes a transistor chip, a device input terminal and a device output terminal. Further, the electronic RF power device includes an output impedance transformation circuit, an output contact clip bonded to the transistor chip and to the output device terminal and at least one bond wire bonded to the output impedance transformation circuit and to the transistor chip.
Public/Granted literature
- US20160005687A1 RADIO FREQUENCY POWER DEVICE Public/Granted day:2016-01-07
Information query
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