Invention Grant
US09245843B2 Semiconductor device with internal substrate contact and method of production
有权
具有内部基板接触的半导体器件和生产方法
- Patent Title: Semiconductor device with internal substrate contact and method of production
- Patent Title (中): 具有内部基板接触的半导体器件和生产方法
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Application No.: US14373627Application Date: 2013-01-16
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Publication No.: US09245843B2Publication Date: 2016-01-26
- Inventor: Jochen Kraft , Jordi Teva , Cathal Cassidy , Günther Koppitsch
- Applicant: ams AG
- Applicant Address: AT Unterpremstaetten
- Assignee: ams AG
- Current Assignee: ams AG
- Current Assignee Address: AT Unterpremstaetten
- Agency: McDermott Will & Emery LLP
- Priority: EP12152485 20120125
- International Application: PCT/EP2013/050736 WO 20130116
- International Announcement: WO2013/110533 WO 20130801
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/308 ; H01L23/522 ; H01L21/768 ; H01L21/74
Abstract:
The semiconductor device comprises a substrate (1) of semiconductor material, a contact hole (2) reaching from a surface (10) into the substrate, and a contact metallization (12) arranged in the contact hole, so that the contact metallization forms an internal substrate contact (4) on the semiconductor material at least in a bottom area (40) of the contact hole.
Public/Granted literature
- US20140367862A1 SEMICONDUCTOR DEVICE WITH INTERNAL SUBSTRATE CONTACT AND METHOD OF PRODUCTION Public/Granted day:2014-12-18
Information query
IPC分类:
