Invention Grant
- Patent Title: Embedded shape SiGe for strained channel transistors
- Patent Title (中): 用于应变通道晶体管的嵌入形状SiGe
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Application No.: US13931509Application Date: 2013-06-28
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Publication No.: US09245955B2Publication Date: 2016-01-26
- Inventor: John H. Zhang , Pietro Montanini
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMicroelectronics, Inc.
- Current Assignee: STMicroelectronics, Inc.
- Current Assignee Address: US TX Coppell
- Agency: Seed IP Law Group PLLC
- Main IPC: H01L29/165
- IPC: H01L29/165 ; H01L21/8238 ; H01L27/092 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L21/265
Abstract:
An integrated circuit die includes a silicon substrate. PMOS and NMOS transistors are formed on the silicon substrate. The carrier mobilities of the PMOS and NMOS transistors are increased by introducing tensile stress to the channel region of the NMOS transistors and compressive stress to the channel regions of the PMOS transistors. Tensile stress is introduced by including a region of SiGe below the channel region of the NMOS transistors. Compressive stress is introduced by including regions of SiGe in the source and drain regions of the PMOS transistors.
Public/Granted literature
- US20150001583A1 NOVEL EMBEDDED SHAPE SIGE FOR NFET CHANNEL STRAIN Public/Granted day:2015-01-01
Information query
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