Invention Grant
US09245964B2 Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell
有权
包括非易失性存储单元的集成电路和形成非易失性存储单元的方法
- Patent Title: Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell
- Patent Title (中): 包括非易失性存储单元的集成电路和形成非易失性存储单元的方法
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Application No.: US14525659Application Date: 2014-10-28
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Publication No.: US09245964B2Publication Date: 2016-01-26
- Inventor: Jun Liu , John K. Zahurak
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/02 ; H01L29/423 ; H01L27/24 ; H01L21/28 ; H01L29/66
Abstract:
An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed.
Public/Granted literature
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