发明授权
US09245964B2 Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell
有权
包括非易失性存储单元的集成电路和形成非易失性存储单元的方法
- 专利标题： Integrated circuitry comprising nonvolatile memory cells and methods of forming a nonvolatile memory cell
- 专利标题（中）： 包括非易失性存储单元的集成电路和形成非易失性存储单元的方法
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申请号： US14525659申请日： 2014-10-28
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公开(公告)号： US09245964B2公开(公告)日： 2016-01-26
- 发明人: Jun Liu , John K. Zahurak
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/02 ; H01L29/423 ; H01L27/24 ; H01L21/28 ; H01L29/66
摘要：
An integrated circuit has a nonvolatile memory cell that includes a first electrode, a second electrode, and an ion conductive material there-between. At least one of the first and second electrodes has an electrochemically active surface received directly against the ion conductive material. The second electrode is elevationally outward of the first electrode. The first electrode extends laterally in a first direction and the ion conductive material extends in a second direction different from and intersecting the first direction. The first electrode is received directly against the ion conductive material only where the first and second directions intersect. Other embodiments, including method embodiments, are disclosed.
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