发明授权
- 专利标题： III-V photovoltaic elements
- 专利标题（中）： III-V光伏元件
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申请号： US14500538申请日： 2014-09-29
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公开(公告)号： US09246032B2公开(公告)日： 2016-01-26
- 发明人: Stephen W. Bedell , Bahman Hekmatshoartabari , Devendra K. Sadana , Davood Shahrjerdi
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Otterstedt, Ellenbogen & Kammer, LLP
- 代理商 Louis J. Percello
- 主分类号： H01L31/20
- IPC分类号： H01L31/20 ; H01L31/0304 ; H01L31/077 ; H01L31/036
摘要：
Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SixGe1−x passivated by amorphous SiyGe1−y:H.
公开/授权文献
- US20150047704A1 III-V PHOTOVOLTAIC ELEMENTS 公开/授权日：2015-02-19
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