发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US13346925申请日: 2012-01-10
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公开(公告)号: US09246444B2公开(公告)日: 2016-01-26
- 发明人: Masatoshi Hase , Kiichiro Takenaka , Hidetoshi Matsumoto , Shun Imai
- 申请人: Masatoshi Hase , Kiichiro Takenaka , Hidetoshi Matsumoto , Shun Imai
- 申请人地址: JP Kyoto
- 专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人: MURATA MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Kyoto
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2011-005646 20110114
- 主分类号: H03F1/56
- IPC分类号: H03F1/56 ; H01P5/12 ; H03F3/195 ; H03F3/21 ; H03F3/24 ; H03H7/38 ; H03H7/48
摘要:
When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.
公开/授权文献
- US20120182086A1 SEMICONDUCTOR DEVICE 公开/授权日:2012-07-19
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