摘要:
A transparent body inspecting device includes a light application unit, an image capturing unit, an image capture driving unit, and a defect determining unit. The image capturing unit is moved in the directions in which the image capturing unit is brought close to and away from the upper surface of the transparent body, and the image capturing unit captures a plurality of images of the transparent body during the movement. The images are captured while the position of the depth of field of the image capturing unit is adjusted to more than one spots inside the transparent body. When brightness of pixels in the captured image is nonuniform, the defect determining unit determines that a defect exists within the depth of field at the time of capture of the image.
摘要:
A duct installation structure in which an air conditioning duct for sending warm air or cold air into a vehicle interior of an automobile is attached to a vehicle interior structure member and an outlet grill is attached to an outlet opening end portion of the air conditioning duct. A grill fixing portion to which the outlet grill is to be fixed is integrally molded with a duct main body portion at the outlet opening end portion of the air conditioning duct. The outlet grill is directly fixed to the grill fixing portion. The outlet opening end portion of the air conditioning duct including, at one point near its center in a width direction, a fastening fixing portion that is fastened and fixed to the vehicle interior structure member and including, at its opposite ends in the width direction, a pair of contact portions for coming in contact with the vehicle interior structure member.
摘要:
A high frequency power amplifier maintains an excellent linearity regardless of a fluctuation of a load impedance and is downsized. The high frequency power amplifier detects an AC voltage amplitude at an output terminal of a final amplification stage transistor, and suppresses an input signal amplitude of a power amplifier when the voltage amplitude exceeds a predetermined threshold value.
摘要:
When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.
摘要:
A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.
摘要:
A RF power amplifying device is constituted by a system of a balanced amplifier including first phase shifters, a first RF power amplifier, a second RF power amplifier, second phase shifters, and a power combiner. Transmitting power Pout is detected by a first power level detector connected to an output of the first RF power amplifier, a second power level detector connected to an output of the second RF power amplifier, and an adder. A level control signal from a level control circuit controls transmitting power in response to a transmitting signal with wanted power level and a detected signal of the adder.
摘要:
The present invention provides a semiconductor device which comprises active components, passive components, wiring lines and electrodes and are satisfactory in terms of mechanical strength, miniaturization and thermal stability. In the semiconductor device, openings are formed just below active components. These openings are filled with conductor layers. Conductor layers are also formed where openings are not formed.
摘要:
In a semiconductor device using an emitter top heterojunction bipolar transistor having a planar shape in a ring-like shape, a structure is provided in which a base electrode is present only on an inner side of a ring-like emitter-base junction region. This allows reduction of base/collector junction capacitance per unit emitter area, whereby a semiconductor device having high power adding efficiency and high power gain suitable for a power amplifier can be realized. Further, in a multistage power amplifier including first and second amplifier circuits each having one or more of bipolar transistors, a bipolar transistor in the first amplifier circuit uses an emitter having a planar shape in a rectangular shape, and a bipolar transistor in the second amplifier circuit uses an emitter having a ring-like shape and a base electrode only on the inner side of the emitter.
摘要:
An RF circuit module, in which a power amplifier and a transceiver are united, with reduced interference between its electronic circuit blocks, downsized and still having high performance, and with a stable performance not dependent on the ground land structure on the motherboard, is provided. The ground plane 110 for at least a last-stage amplifier 11 of the power amplifier 10 where the greatest power is generated in the whole RF circuit block, that is, the source of generating the greatest noise and heat for the RF circuit block, is isolated from the ground plane for at least one circuit portion of the transceiver 9 including an LNA 51, receiver 52, transmitter 30, and VCO 70. These ground planes are connected to a common ground plane 480 through different connection conductors, respectively.
摘要:
A power amplifier module comprises a plurality of amplifier stages, each including a reference amplifier for emulating the operation of the amplifier. The current flowing to the base of a bipolar transistor that forms each reference amplifier depending on an input power level is detected, amplified, and supplied as base current of the transistor of the corresponding amplifier.