发明授权
- 专利标题: Memory system and control method of memory system
- 专利标题(中): 内存系统和内存系统的控制方法
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申请号: US13599087申请日: 2012-08-30
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公开(公告)号: US09251055B2公开(公告)日: 2016-02-02
- 发明人: Shinji Yonezawa , Takashi Hirao , Hirokuni Yano , Mitsunori Tadokoro , Hiroki Matsudaira , Akira Sawaoka
- 申请人: Shinji Yonezawa , Takashi Hirao , Hirokuni Yano , Mitsunori Tadokoro , Hiroki Matsudaira , Akira Sawaoka
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2012-037965 20120223; JP2012-060698 20120316; JP2012-068868 20120326
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
A memory system in embodiments includes a nonvolatile semiconductor memory that stores user data, a forward lookup address translation table and a reverse lookup address translation table, and a controller. The controller is configured to determine that the user data stored in the nonvolatile semiconductor memory is valid or invalid based on these two tables. The controller may perform data organizing of selecting data determined valid and rewriting the data in a new block. The controller may perform write processing and rewriting processing to the new block alternately at a predetermined ratio. The controller may determine whether a predetermined condition is satisfied on a basis of addresses included in write requests and write data in the MLC mode when the condition is satisfied and write data in the SLC mode when the condition is not satisfied.
公开/授权文献
- US20130232296A1 MEMORY SYSTEM AND CONTROL METHOD OF MEMORY SYSTEM 公开/授权日:2013-09-05
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