Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14172020Application Date: 2014-02-04
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Publication No.: US09252078B2Publication Date: 2016-02-02
- Inventor: Toshihide Suzuki , Masaru Sato
- Applicant: FUJITSU LIMITED
- Applicant Address: JP Kawasaki
- Assignee: FUJITSU LIMITED
- Current Assignee: FUJITSU LIMITED
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2013-062777 20130325
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/48 ; H01L23/522 ; H01L23/66
Abstract:
A semiconductor device includes a first electrode formed on a substrate, the first electrode being a first electrical potential; and a second electrode formed on the first electrode, the second electrode including a signal wiring that transmits a signal and a planar electrode part with a prescribed area. A shape of the first electrode corresponding to the planar electrode part is made into a slit shape such that a longitudinal direction of a slit is parallel to a direction in which the signal proceeds in the planar electrode part.
Public/Granted literature
- US20140284804A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-09-25
Information query
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