Invention Grant
- Patent Title: Complementary back end of line (BEOL) capacitor
- Patent Title (中): 互补后端(BEOL)电容
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Application No.: US14512191Application Date: 2014-10-10
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Publication No.: US09252104B2Publication Date: 2016-02-02
- Inventor: John J. Zhu , Bin Yang , Pr Chidambaram , Lixin Ge , Jihong Choi
- Applicant: QUALCOMM INCORPORATED
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/538 ; H01L27/08 ; H01L49/02 ; H01L23/522

Abstract:
A complementary back end of line (BEOL) capacitor (CBC) structure includes a metal oxide metal (MOM) capacitor structure. The MOM capacitor structure is coupled to a first upper interconnect layer of an interconnect stack of an integrated circuit (IC) device. The MOM capacitor structure includes a lower interconnect layer of the interconnect stack. The CBC structure also includes a second upper interconnect layer of the interconnect stack coupled to the MOM capacitor structure. The CBC structure also includes a metal insulator metal (MIM) capacitor layer between the first upper interconnect layer and the second upper interconnect layer. In addition, CBC structure also includes a MIM capacitor structure coupled to the MOM capacitor structure. The MIM capacitor structure includes a first capacitor plate having a portion of the first upper interconnect layer, and a second capacitor plate having a portion of the MIM capacitor layer(s).
Public/Granted literature
- US20150028452A1 COMPLEMENTARY BACK END OF LINE (BEOL) CAPACITOR Public/Granted day:2015-01-29
Information query
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