Invention Grant
US09252147B2 Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip
有权
用于形成与芯片上的不同RF频带相关联的多个射频（RF）分量的方法和装置
- Patent Title: Methods and apparatuses for forming multiple radio frequency (RF) components associated with different RF bands on a chip
- Patent Title (中): 用于形成与芯片上的不同RF频带相关联的多个射频（RF）分量的方法和装置
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Application No.: US13958646Application Date: 2013-08-05
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Publication No.: US09252147B2Publication Date: 2016-02-02
- Inventor: Ranadeep Dutta , Choh Fei Yeap
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Incorporated
- Current Assignee: Qualcomm Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L27/092 ; H01L21/8238 ; H01L21/8234 ; H01L27/088 ; H01L27/12 ; H03F3/195 ; H03F1/02 ; H03F3/24 ; H03F3/72
Abstract:
A method includes forming a first gate oxide in a first region and in a second region of a wafer. The method further includes performing first processing to form a second gate oxide in the second region. The second gate oxide has a different thickness than the first gate oxide. The method also includes forming first gate material of a first device in the first region and forming second gate material of a second device in the second region. The first device corresponds to a first radio frequency (RF) band and the second device corresponds to a second RF band that is different from the first RF band.
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