Invention Grant
US09254997B2 CMOS-MEMS integrated flow for making a pressure sensitive transducer
有权
用于制造压敏传感器的CMOS-MEMS集成流
- Patent Title: CMOS-MEMS integrated flow for making a pressure sensitive transducer
- Patent Title (中): 用于制造压敏传感器的CMOS-MEMS集成流
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Application No.: US14013080Application Date: 2013-08-29
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Publication No.: US09254997B2Publication Date: 2016-02-09
- Inventor: Chun-Wen Cheng , Kai-Chih Liang , Chia-Hua Chu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; B81C1/00

Abstract:
A sensor is made up of two substrates which are adhered together. A first substrate includes a pressure-sensitive micro-electrical-mechanical (MEMS) structure and a conductive contact structure that protrudes outwardly beyond a first face of the first substrate. A second substrate includes a complementary metal oxide semiconductor (CMOS) device and a receiving structure made up of sidewalls that meet a conductive surface which is recessed from a first face of the second substrate. A conductive bonding material physically adheres the conductive contact structure to the conductive surface and electrically couples the MEMS structure to the CMOS device.
Public/Granted literature
- US20150060954A1 CMOS-MEMS Integrated Flow for Making a Pressure Sensitive Transducer Public/Granted day:2015-03-05
Information query
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