Invention Grant
- Patent Title: Programmable memory controller
- Patent Title (中): 可编程存储控制器
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Application No.: US13865959Application Date: 2013-04-18
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Publication No.: US09256369B2Publication Date: 2016-02-09
- Inventor: Mahdi Nazm Bojnordi , Engin Ipek , Arun S. Jagatheesan
- Applicant: SAMSUNG ELECTRONICS CO., LTD. , University of Rochester
- Applicant Address: KR Suwon-si US NY Rochester
- Assignee: Samsung Electronics Co., Ltd.,University of Rochester
- Current Assignee: Samsung Electronics Co., Ltd.,University of Rochester
- Current Assignee Address: KR Suwon-si US NY Rochester
- Agency: Sherman IP LLP
- Agent Kenneth L. Sherman; Steven Laut
- Main IPC: G06F13/14
- IPC: G06F13/14 ; G06F3/06 ; G11C7/10 ; G06F13/16

Abstract:
One embodiment includes a programmable memory controller. The programmable memory controller includes a request processor that comprises a first domain-specific instruction set architecture (ISA) for accelerating common requests. A transaction processor comprises a second domain-specific ISA for accelerating transaction processing tasks. A dedicated command logic module inspects each memory command to a memory device and stalls particular commands for meeting timing constraints for application specific control of the memory device.
Public/Granted literature
- US20130282972A1 PROGRAMMABLE MEMORY CONTROLLER Public/Granted day:2013-10-24
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