Invention Grant
- Patent Title: Organic thin film passivation of metal interconnections
- Patent Title (中): 金属互连有机薄膜钝化
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Application No.: US13977663Application Date: 2011-12-31
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Publication No.: US09257276B2Publication Date: 2016-02-09
- Inventor: Aleksandar Aleksov , Tony Dambrauskas , Danish Faruqui , Mark S. Hlad , Edward R. Prack
- Applicant: Aleksandar Aleksov , Tony Dambrauskas , Danish Faruqui , Mark S. Hlad , Edward R. Prack
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Agency: Konrad Raynes Davda & Victor LLP
- Agent Alan S. Raynes
- International Application: PCT/US2011/068275 WO 20111231
- International Announcement: WO2013/101241 WO 20130704
- Main IPC: H01L23/488
- IPC: H01L23/488 ; H01L21/02 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L21/683 ; H01L23/498 ; H01L23/00 ; H01L23/31

Abstract:
Electronic assemblies and their manufacture are described. One embodiment relates to a method including depositing an organic thin film layer on metal bumps on a semiconductor wafer, the organic thin film layer also being formed on a surface adjacent to the metal bumps on the wafer. The wafer is diced into a plurality of semiconductor die structures, the die structures including the organic thin film layer. The semiconductor die structures are attached to substrates, wherein the attaching includes forming a solder bond between the metal bumps on a die structure and bonding pads on a substrate, and wherein the solder bond extends through the organic thin film layer. The organic thin film layer is then exposed to a plasma. Other embodiments are described and claimed.
Public/Granted literature
- US20140138818A1 ORGANIC THIN FILM PASSIVATION OF METAL INTERCONNECTIONS Public/Granted day:2014-05-22
Information query
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