Invention Grant
- Patent Title: Method of manufacturing photodiode detectors
- Patent Title (中): 制造光电二极管探测器的方法
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Application No.: US14144253Application Date: 2013-12-30
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Publication No.: US09257480B2Publication Date: 2016-02-09
- Inventor: Ri-an Zhao , Kwang Hyup An , Guatam Parthasarathy , Aaron Judy Couture , Jie Jerry Liu , William Andrew Hennessy
- Applicant: General Electric Company
- Applicant Address: US NY Niskayuna
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Niskayuna
- Agent Robert M. McCarthy
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L27/148 ; H01L27/146 ; H01L27/30

Abstract:
A radiation detector assembly including an organic photodetector that generate charge in response to an incident radiation, a thin film transistor array including a plurality of pixels. The plurality of pixels may produce electric signals corresponding to the charge generated by the organic photodetector. The radiation detector assembly also includes a spacer disposed on the thin film transistor array. The spacer surrounds one or more pixels and may confine the organic photodetector within the surrounded one or more pixels such that the surrounded one or more pixels are electrically isolated from a neighboring pixel.
Public/Granted literature
- US20150187837A1 METHOD OF MANUFACTURING PHOTODIODE DETECTORS Public/Granted day:2015-07-02
Information query
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