Invention Grant
- Patent Title: Semiconductor structure with self-aligned wells and multiple channel materials
- Patent Title (中): 具有自对准井和多通道材料的半导体结构
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Application No.: US14282463Application Date: 2014-05-20
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Publication No.: US09257557B2Publication Date: 2016-02-09
- Inventor: David P. Brunco
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/78 ; H01L21/762 ; H01L21/02 ; H01L21/265

Abstract:
Embodiments of the present invention provide a semiconductor structure having a strain relaxed buffer, and method of fabrication. A strain relaxed buffer is disposed on a semiconductor substrate. A silicon region and silicon germanium region are disposed adjacent to each other on the strain relaxed buffer. An additional region of silicon or silicon germanium provides quantum well isolation.
Public/Granted literature
- US20150340500A1 SEMICONDUCTOR STRUCTURE WITH SELF-ALIGNED WELLS AND MULTIPLE CHANNEL MATERIALS Public/Granted day:2015-11-26
Information query
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